|Title||Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry|
|Publication Type||Journal Article|
|Year of Publication||2013|
|Authors||Molina-Ruiz, M, Lopeandía, AF, González-Silveira, M, Anahory, Y, Guihard, M, Garcia, G, Clavaguera-Mora, MT, Schiettekatte, F, Rodríguez-Viejo, J|
|Journal||Applied Physics Letters|
|Keywords||Differential scanning calorimeters, Nucleation, Reaction kinetics modeling, Thin film growth, Thin films|
The kinetics of intermediate phase formation between ultrathin films of Pd (12 nm) and single-crystalline Si (100) is monitored by in-situ nanocalorimetry at ultrafast heating rates. The heat capacity curves show an exothermic peak related to the formation of Pd2Si. A kinetic model which goes beyond the conventional linear-parabolic growth to consider independent nucleation and lateral growth of Pd2Si along the interface and vertical growth mechanisms is developed to fit the calorimetric curves. The model is used to extract the effective interfacial nucleation/growth and diffusion coefficients at the unusually high temperatures of silicide formation achieved at very fast heating rates.