Thermal conductivity of thin single-crystalline germanium-on-insulator structures

TitleThermal conductivity of thin single-crystalline germanium-on-insulator structures
Publication TypeJournal Article
Year of Publication2011
AuthorsAlvarez-Quintana, J, Rodríguez-Viejo, J, Alvarez, FX, Jou, D
JournalInternational Journal of Heat and Mass Transfer
Volume54
Start Page1959
Issue9-10
KeywordsGermanium-on-insulator, Thermal conductivity, Thin film
Abstract

We report on the effective cross-plane thermal conductivity of single-crystal Ge layers from 42 to 100 nm on a SiO2/Si substrate in the temperature range 30–300 K. We observe a drastic reduction of the thermal conductivity compared to bulk germanium. A large contribution to the temperature rise in the Ge layer is due to the interfacial thermal resistance between c-Ge/SiO2. The use of a size-dependent intrinsic thermal conductivity of the Ge layer instead of the bulk thermal conductivity improves the consistency with values of the thermal boundary resistance derived from the diffusive mismatch model. Ultrathin films of Ge suffer from a lower reduction of the thermal conductivity compared to ultrathin films of Si, which makes germanium-on-insulator structures promising candidates for devices with reduced self-heating effects compared to silicon-on-insulator structures.

URLhttp://dx.doi.org/10.1016/j.ijheatmasstransfer.2011.01.006
DOI10.1016/j.ijheatmasstransfer.2011.01.006
Short TitleInternational Journal of Heat and Mass Transfer, Volume 54, Issues 9-10, April 2011, Pages 1959-1962
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