Publications

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Author Title Type [ Year(Asc)]
2017
S. Claramunt, Pedreira, G., Wu, Q., Ruiz, A., Porti, M., Nafría, M., and Aymerich, X., Analysis of the Resistive Switchingbehaviour of Ti/GO/Au ReRAM structures, in Graphene Conference, Barcelona, Spain, 2017.
M. Pedró, Martín-Martínez, J., González, M. B., Campabadal, F., Nafría, M., and Aymerich, X., Control of the Bipolar Resistive Switching Conductivity for Neuromorphic Computing Applications, Electron Device Spanish Conference (CDE). Barcelona, Spain, 2017.
C. Couso, Díaz-Fortuny, J., Martín-Martínez, J., Porti, M., Rodríguez, R., Nafría, M., Fernández, F. V., Roca, E., Castro-López, R., Barajas, E., Mateo, D., and Aragones, X., Dependence of MOSFETs Threshold Voltage Variability on Channel Dimensions, in Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on, Athens, Greece , 2017.
C. Couso, Martín-Martínez, J., Porti, M., Nafría, M., and Aymerich, X., Efficient methodology to extract interface traps parameters for TCAD simulations, Microelectronics Engineering, vol. 178, pp. 66-70, 2017.
M. Maestro, Díaz-Fortuny, J., Martín-Martínez, J., Crespo-Yepes, A., Rodríguez, R., Nafría, M., and Aymerich, X., Enhancement of Resistive Switching Measurement TimeResolution by a Developed Ultrafast System, Electron Device Spanish Conference (CDE). Barcelona, Spain, 2017.
G. Vescio, Crespo-Yepes, A., Alonso, D., Claramunt, S., Porti, M., Rodríguez, R., Cornet, A., Cirera, A., Nafría, M., and Aymerich, X., Inkjet Printed HfO2-based ReRAMs: first demonstration and performance characterization, IEEE Electron Device Letters, vol. 38, pp. 457-460, 2017.
C. Couso, Porti, M., Martín-Martínez, J., Garcia-Loureiro, A. J., Seoane, N., and Nafría, M., Local Defect Density in Polycrystaline High-k dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability, IEEE Electron Device Letters, vol. 38, pp. 637-640, 2017.
A. Crespo-Yepes, Barajas, E., Martín-Martínez, J., Mateo, D., Aragones, X., Rodríguez, R., and Nafría, M., MOSFET degradation dependence on input signal power in a RF power amplifier, Microelectronics Engineering, vol. 178, pp. 289-292, 2017.
S. Claramunt, Sempere, B., Wu, Q., Ruiz, A., Porti, M., Colomines, C., Nafría, M., and Aymerich, X., Nanoscale electrical characterization of a varistor-like device fabricated with oxydized CVD graphene, in Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on, Athens, Greece, 2017.
Q. Wu, Claramunt, S., Porti, M., González, M. B., Martín-Martínez, J., Campabadal, F., and Nafría, M., Nanosclae observation of conductive filaments in Ni/HfO2/Si structures, in China RRAM Intenational Conference, China, 2017.
S. Claramunt, Wu, Q., Maestro, M., Porti, M., Acero, M. C., González, M. B., Martín-Martínez, J., Campabadal, F., and Nafría, M., Ni/HfO2/Si Resistive Switching structures: A device level and nanoscale analysis with CAFM, in Electron Device Spanish Conference (CDE), Barcelona, Spain, 2017.
J. Martín-Martínez, Jiménez, N., Pedró, M., González, M. B., Rodríguez, R., Nafría, M., and Campabadal, F., Synaptic Plasticity implemented in TiN/Ti/HfO2/W structures, Memristive System and Devices (MEMRISYS). Athens, Greece, 2017.
M. Maestro, Martín-Martínez, J., Crespo-Yepes, A., Escudero, M., Rodríguez, R., Nafría, M., Aymerich, X., and Rubio, A., Transient Analysis of an Experimentally-Verified Memristor-Based IMPLY Gate, Memristive System and Devices (MEMRISYS). Athens, Greece, 2017.
M. Pedró, Martín-Martínez, J., González, M. B., Rodríguez, R., Campabadal, F., Nafría, M., and Aymerich, X., Tuning the conductivity of resistive switching devices for electronic synapses, Microelectronics Engineering, vol. 178, pp. 89-92, 2017.

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