-- UNDER CONSTRUCTION --
REDEC’s research is focused on the reliability and variability of CMOS nanoelectronic devices, emerging devices and integrated circuits. Electrical characterization and modelling of the device time-dependent variability in these technologies is carried out adopting a multilevel scale, covering from the nanoscale to the device and circuit levels. The aim is the development of physics-based compact models for the reliability circuit simulators required in the Design-for-Reliability context. This approach is extended to other emerging nanoelectronic devices, as Resistive Switching and graphene based devices.
CMOs technology, nanoelectronics, reliability, variability, electrical characterization, Atomic Force Microscopy, aging mechanisms, compact modeling, TCAD simulations, Resistive Switching, RRAM, Graphene devices, neuromorphic hardware.
3) Research lines:
- Characterization and modeling of the aging mechanisms (RTN, BTI, HCI) in advanced nanoelectronic devices, including process-related variability. Nanoscale (with CAFM) and device level evaluation.
- Compact modelling of the aging mechanisms, for their inclusion in circuit reliability simulators.
- Resistive Switching devices. Device characterization and modelling. Computing architectures.
- Variability sources in graphene-based nanodevices.